ROOM-TEMPERATURE OPERATION OF GAINAS/GAINASP/INP SCH LASERS WITH QUANTUM-WIRE SIZE ACTIVE-REGION

被引：27

作者：

MIYAKE, Y ^{[1
]}

HIRAYAMA, H ^{[1
]}

KUDO, K ^{[1
]}

TAMURA, S ^{[1
]}

ARAI, S ^{[1
]}

ASADA, M ^{[1
]}

MIYAMOTO, Y ^{[1
]}

SUEMATSU, Y ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,TOKYO 152,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/3.234478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Improvements in the fabrication process of GaInAs(P)/InP devices consisting of an ultrafine structure by using two-step organometallic vapor phase epitaxy growth, electron beam exposure direct writing, and wet chemical etching are reported. This improved process enabled us to achieve, for the first time, a room-temperature continuous-wave operation of GaInAs/InP quantum-wire lasers consisting of 5-nm-thick and 10-30 nm-wide vertically stacked triple quantum-wire active region within the period of 70 nm. A large blue shift of approximately 40 nm was observed in both the lasing and the electroluminescence spectra of Ga0.3In0.7As/InP compressively strained multi-quantum-well wirelasers consisting of a 3 nm-thick and 30-60 nm-wide five-wire active region, which suggests a reduced effective mass of holes along the in-plane direction.

引用

页码：2123 / 2133

页数：11

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