ROOM-TEMPERATURE OPERATION OF GAINAS/GAINASP/INP SCH LASERS WITH QUANTUM-WIRE SIZE ACTIVE-REGION

被引：27

作者：

MIYAKE, Y ^{[1
]}

HIRAYAMA, H ^{[1
]}

KUDO, K ^{[1
]}

TAMURA, S ^{[1
]}

ARAI, S ^{[1
]}

ASADA, M ^{[1
]}

MIYAMOTO, Y ^{[1
]}

SUEMATSU, Y ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,TOKYO 152,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/3.234478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Improvements in the fabrication process of GaInAs(P)/InP devices consisting of an ultrafine structure by using two-step organometallic vapor phase epitaxy growth, electron beam exposure direct writing, and wet chemical etching are reported. This improved process enabled us to achieve, for the first time, a room-temperature continuous-wave operation of GaInAs/InP quantum-wire lasers consisting of 5-nm-thick and 10-30 nm-wide vertically stacked triple quantum-wire active region within the period of 70 nm. A large blue shift of approximately 40 nm was observed in both the lasing and the electroluminescence spectra of Ga0.3In0.7As/InP compressively strained multi-quantum-well wirelasers consisting of a 3 nm-thick and 30-60 nm-wide five-wire active region, which suggests a reduced effective mass of holes along the in-plane direction.

引用

页码：2123 / 2133

页数：11

共 38 条

[21] MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J].

LUTTINGER, JM ;

KOHN, W .

PHYSICAL REVIEW, 1955, 97 (04) :869-883

[22]

Matsubara K., 1989, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE72, P1179

[23] ROOM-TEMPERATURE OPERATION OF GAINAS-GAINASP-INP SCH MULTIQUANTUM-FILM LASER WITH NARROW WIRE-LIKE ACTIVE REGION [J].

MIYAKE, Y ;

HIRAYAMA, H ;

ARAI, S ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (03) :191-192

[24] SPECTRAL CHARACTERISTICS OF LINEWIDTH ENHANCEMENT FACTOR-ALPHA OF MULTIDIMENSIONAL QUANTUM WELLS [J].

MIYAKE, Y ;

ASADA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (07) :1280-1281

[25]

MIYAKE Y, 1992, IEEE PHOTONIC TECH L, V4, P957

[26] IMPROVEMENT OF REGROWN INTERFACE IN INP ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

MIYAMOTO, Y ;

HIRAYAMA, H ;

SUEMASU, T ;

MIYAKE, Y ;

ARAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4B) :L672-L674

[27] THRESHOLD CURRENT-DENSITY OF GAINASP-INP QUANTUM-BOX LASERS [J].

MIYAMOTO, Y ;

MIYAKE, Y ;

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (09) :2001-2006

[28] LIGHT-EMISSION FROM QUANTUM-BOX STRUCTURE BY CURRENT INJECTION [J].

MIYAMOTO, Y ;

CAO, M ;

SHINGAI, Y ;

FURUYA, K ;

SUEMATSU, Y ;

RAVIKUMAR, KG ;

ARAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04) :L225-L227

[29] BAND-GAP SHRINKAGE IN GAINAS/GAINASP/INP MULTIQUANTUM WELL LASERS [J].

PARK, SH ;

SHIM, JI ;

KUDO, K ;

ASADA, M ;

ARAI, S .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) :279-281

[30] VERTICALLY STACKED MULTIPLE-QUANTUM-WIRE SEMICONDUCTOR DIODE-LASERS [J].

SIMHONY, S ;

KAPON, E ;

COLAS, E ;

HWANG, DM ;

STOFFEL, NG ;

WORLAND, P .

APPLIED PHYSICS LETTERS, 1991, 59 (18) :2225-2227

← 1 2 3 4 →