IMPROVEMENT OF REGROWN INTERFACE IN INP ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：12

作者：

MIYAMOTO, Y ^{[1
]}

HIRAYAMA, H ^{[1
]}

SUEMASU, T ^{[1
]}

MIYAKE, Y ^{[1
]}

ARAI, S ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 4B期

关键词：

REGROWTH; INP; OMVPE; (NH4)S-2(X); PREHEATING PROCESS;

D O I：

10.1143/JJAP.30.L672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that a preheating process in a pure hydrogen atmosphere with a (NH4)2S(x) treatment was effective for improvement of the regrown interface in InP organometallic vapor phase epitaxy (OMVPE). The carrier concentration was under 5 x 10(15) cm-3 in the entire region after the regrowth, even if we carried out various dummy processes of fabrication between the first growth and the surface treatment for improvement. Thus, this improvement will be useful for the device-required regrowth process after fabrication of an ultrafine-size structure.

引用

页码：L672 / L674

页数：3

共 10 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].