BURIED RECTANGULAR GAINAS/INP CORRUGATIONS OF 70 NM PITCH FABRICATED BY OMVPE

被引：9

作者：

YAMAMOTO, T

MIYAMOTO, Y

OGAWA, M

INAMURA, E

FURUYA, K

机构：

[1] Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, Tokyo, 2-12-1, O-okayama, Meguro-Ku

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 13期

关键词：

Gallium compounds; Indium compounds; materials; Semiconductor devices; Vapour deposition;

D O I：

10.1049/el:19900572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Rectangular InP corrugations of 70 nm pitch and 40 nm depth were buried with GalnAs by OMVPE so as to preserve the rectangular shape. A low regrowth temperature and short heating up time in an atmosphere of high PH3 partial pressure are effective in the suppression of thermal deformation during regrowth. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：875 / 876

页数：2

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