OMVPE CONDITIONS FOR GAINAS/INP HETEROINTERFACES AND SUPERLATTICES

被引：10

作者：

MIYAMOTO, Y

UESAKA, K

TAKADOU, M

FURUYA, K

SUEMATSU, Y

机构：

[1] Tokyo Inst of Technology, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Crystals--Epitaxial Growth - Organometallics - Photoluminescence - Semiconductor Devices--Heterojunctions;

D O I：

10.1016/0022-0248(88)90552-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper reports OMVPE growth conditions and evaluation of GaInAs/InP superlattices. In order to improve the heterointerface properties, transient responses of the mole flow rate caused by gas switching have been analyzed quantitatively. The required pressure drop just after the bubbler for stable supply of metalorganic sources was confirmed experimentally. Furthermore, it is pointed out that a compensating flow to maintain reactor atmosphere is also effective. GaInAs/InP superlattices grown by using these analytical results showed definite satellite peaks in the X-ray diffraction characteristics, definite steps in the absorption spectrum and a photoluminescence peak as narrow as 12 mev at 77 K.

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页码：353 / 358

页数：6

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