HIGH-RESOLUTION X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF INGAAS/INP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：34

作者：

VANDENBERG, JM

CHU, SNG

HAMM, RA

PANISH, MB

TEMKIN, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 19期

关键词：

D O I：

10.1063/1.97393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1302 / 1304

页数：3

共 9 条

[1]

CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378

[2]

HAMM RA, 1985, P MATER RES SOC, V37, P367

[3] STRUCTURE AND COHERENCE OF NBAL MULTILAYER FILMS [J].

MCWHAN, DB ;

GURVITCH, M ;

ROWELL, JM ;

WALKER, LR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3886-3891

[4] OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

PANISH, MB ;

TEMKIN, H ;

HAMM, RA ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :164-166

[5] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS [J].

PANISH, MB ;

TEMKIN, H ;

SUMSKI, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :657-665

[6] X-RAY DIFFRACTION FROM ONE-DIMENSIONAL SUPERLATTICES IN GAAS1-XPX CRYSTALS [J].

SEGMULLER, A ;

BLAKESLEE, AE .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (FEB1) :19-25

[7] GAINAS(P) INP QUANTUM WELL STRUCTURES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

TEMKIN, H ;

PANISH, MB ;

PETROFF, PM ;

HAMM, RA ;

VANDENBERG, JM ;

SUMSKI, S .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :394-396

[8] IN GAAS/INP SUPERLATTICE AVALANCHE PHOTODETECTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

TEMKIN, H ;

PANISH, MB ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1986, 49 (14) :859-861

[9] STRUCTURAL CHARACTERIZATION OF GALNAS(P)/INP QUANTUM-WELL STRUCTURES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

VANDENBERG, JM ;

HAMM, RA ;

MACRANDER, AT ;

PANISH, MB ;

TEMKIN, H .

APPLIED PHYSICS LETTERS, 1986, 48 (17) :1153-1155

← 1 →