IN GAAS/INP SUPERLATTICE AVALANCHE PHOTODETECTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：19

作者：

TEMKIN, H

PANISH, MB

CHU, SNG

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 14期

关键词：

D O I：

10.1063/1.97517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：859 / 861

页数：3

共 20 条

[1]

BURRUS C, COMMUNICATION

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HOLDEN, WS ;

KASPER, BL .

ELECTRONICS LETTERS, 1983, 19 (20) :818-820

[3] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].

CAPASSO, F ;

TSANG, WT ;

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APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40

[4] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].

CHIN, R ;

HOLONYAK, N ;

STILLMAN, GE ;

TANG, JY ;

HESS, K .

ELECTRONICS LETTERS, 1980, 16 (12) :467-469

[5] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

KIM, OK ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :95-98

[6] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J].

FORREST, SR ;

SCHMIDT, PH ;

WILSON, RB ;

KAPLAN, ML .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1199-1201

[7] HIGH AVALANCHE GAIN IN SMALL-AREA INP PHOTO-DIODES [J].

LEE, TP ;

BURRUS, CA ;

DENTAI, AG ;

BALLMAN, AA ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :511-513

[8] PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MARSH, JH ;

ROBERTS, JS ;

CLAXTON, PA .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1161-1163

[9] NEW HIGH-SPEED LONG-WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS MULTIQUANTUM WELL AVALANCHE PHOTODIODES [J].

MOHAMMED, K ;

CAPASSO, F ;

ALLAM, J ;

CHO, AY ;

HUTCHINSON, AL .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :597-599

[10] DOUBLE HETEROSTRUCTURE AND MULTIQUANTUM-WELL LASERS AT 1.5-1.7 MU-M GROWN BY ATMOSPHERIC-PRESSURE MOVPE [J].

NELSON, AW ;

MOSS, RH ;

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WONG, S .

ELECTRONICS LETTERS, 1985, 21 (08) :329-331

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