2-DIMENSIONAL ELECTRON GASES IN QUANTUM WELL AND SUPERLATTICES OF GA0.25IN0.75AS0.50P0.50 INP HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：20

作者：

RAZEGHI, M

DUCHEMIN, JP

PORTAL, JC

机构：

[1] INST NATL SCI APPL LYON,LPS,F-31077 TOULOUSE,FRANCE

[2] CNRS,SNCI,F-38042 GRENOBLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 01期

关键词：

D O I：

10.1063/1.95846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：46 / 48

页数：3

共 9 条

[1] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[2] GAINAS AND GAINASP MATERIALS GROWN BY LOW-PRESSURE MOCVD FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS [J].

DUCHEMIN, JP ;

HIRTZ, JP ;

RAZEGHI, M ;

BONNET, M ;

HERSEE, SD .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :64-73

[3] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

GULDNER, Y ;

VIEREN, JP ;

VOISIN, P ;

VOOS, M ;

RAZEGHI, M ;

POISSON, MA .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :877-879

[4] HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES [J].

PORTAL, JC ;

NICHOLAS, RJ ;

BRUMMELL, MA ;

RAZEGHI, M ;

POISSON, MA .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :293-295

[5]

PORTAL JP, UNPUB

[6]

POULAIN P, 1984, 9TH INT C SEM LAS RI

[7] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP AND RELATED-COMPOUNDS [J].

RAZEGHI, M ;

POISSON, MA ;

LARIVAIN, JP ;

DUCHEMIN, JP .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) :371-395

[8] VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD [J].

RAZEGHI, M ;

HERSEE, S ;

HIRTZ, P ;

BLONDEAU, R ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1983, 19 (09) :336-337

[9]

RAZEGHI M, 1984, REV TECH TH CSF, V16, P1

← 1 →