VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD

被引：25

作者：

RAZEGHI, M

HERSEE, S

HIRTZ, P

BLONDEAU, R

DECREMOUX, B

DUCHEMIN, JP

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 09期

关键词：

D O I：

10.1049/el:19830232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：336 / 337

页数：2

相关论文

共 7 条

[1] [Anonymous], 1977, SEMICONDUCTOR LASERS
[2] NEAR-EQUILIBRIUM LPE GROWTH OF LOW THRESHOLD CURRENT-DENSITY IN 1-XGAXASYP1-Y (LAMBDA = 1.35-MU) DH LASERS
NELSON, RJ
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 654 - 656
[3] 1.5 MU-M ROOM-TEMPERATURE PULSED OPERATION OF GAINASP-INP DOUBLE HETEROSTRUCTURE GROWN BY LP MOCVD
RAZEGHI, M
HIRTZ, P
LARIVAIN, JP
BLONDEAU, R
DECREMOUX, B
DUCHEMIN, JP
[J]. ELECTRONICS LETTERS, 1981, 17 (18) : 643 - 642
[4] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.5 MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION (LP-MO CVD)
RAZEGHI, M
HIRTZ, P
BLONDEAU, R
LARIVAIN, JP
NOEL, L
DECREMOUX, B
DUCHEMIN, JP
[J]. ELECTRONICS LETTERS, 1982, 18 (03) : 132 - 133
[5] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.23-MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
HIRTZ, JP
HIRTZ, P
LARIVAIN, JP
BONDEAU, R
DECREMOUX, B
DUCHEMIN, JP
[J]. ELECTRONICS LETTERS, 1981, 17 (17) : 597 - 598
[6] RAZEGHI M, 1983, REV TECH THOMSON CSF, V15, P1
[7] RAZEGHI M, 1983, UNPUB J ELECTRONIC M