PARAMETRIC ANALYSIS OF CONTROL PARAMETERS IN MOCVD

被引：37

作者：

BETSCH, RJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90303-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：210 / 218

页数：9

共 6 条

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[4] COMPOSITIONAL TRANSIENTS IN MOCVD GROWN III-V-HETEROSTRUCTURES [J].

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CULLIS, AG .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :412-421

[5] EVIDENCE FOR TRANSIENT COMPOSITION VARIATIONS AT GAAS/GAL-XALXAS HETEROSTRUCTURE INTERFACES PREPARED BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

THRUSH, EJ ;

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GRIFFITHS, RJM .

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[6] CHARACTERIZATION OF LP-MOCVD GROWN (AL, GA)AS/GAAS HETEROSTRUCTURES BY PHOTOLUMINESCENCE - SINGLE HETEROJUNCTION AND INADVERTENT QUANTUM WELLS [J].

ZEMON, S ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (12) :L925-L927

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