EVIDENCE FOR TRANSIENT COMPOSITION VARIATIONS AT GAAS/GAL-XALXAS HETEROSTRUCTURE INTERFACES PREPARED BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

THRUSH, EJ ^{[1
]}

WALEEVANS, G ^{[1
]}

WHITEAWAY, JEA ^{[1
]}

LAMB, BL ^{[1
]}

WIGHT, DR ^{[1
]}

CHEW, NG ^{[1
]}

CULLIS, AG ^{[1
]}

GRIFFITHS, RJM ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 06期

关键词：

D O I：

10.1007/BF02655311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：969 / 988

页数：20

共 12 条

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