PREPARATION AND PROPERTIES OF GAAS-LAYERS FOR NOVEL FET STRUCTURES

被引：13

作者：

GRIFFITHS, RJM

BLENKINSOP, ID

WIGHT, DR

机构：

[1] Royal Signals and Radar Establishment, Baldock

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 20期

关键词：

Field-effect transistors; Gallium arsenide;

D O I：

10.1049/el:19790448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N-type GaAs/Ga0·4Al0·6As heterostructures have been grown on semi-insulating GaAs substrates using metal-organic chemical vapour deposition. The GaAs layers were mounted on insulator supports and the substrates and Ga0·4Al0·6As removed using a preferential etching procedure. The preparation and electrical properties of submicrometre thick insulator-supported n-type GaAs layers are described. © 1979, Controller, HMSO. All rights reserved.

引用

页码：629 / 630

页数：2

共 11 条

[1] AUTOMATIC CARRIER CONCENTRATION PROFILE PLOTTER USING AN ELECTROCHEMICAL TECHNIQUE [J].