COMPOSITIONAL TRANSIENTS IN MOCVD GROWN III-V-HETEROSTRUCTURES

被引：33

作者：

THRUSH, EJ ^{[1
]}

WHITEAWAY, JEA ^{[1
]}

WALEEVANS, G ^{[1
]}

WIGHT, DR ^{[1
]}

CULLIS, AG ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90443-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：412 / 421

页数：10

相关论文

共 11 条

[1] INFLUENCE OF ALAS MOLE FRACTION ON THE ELECTRON-MOBILITY OF (AL,GA)AS/GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
FISCHER, R
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1028 - 1029
[2] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION
GOSSARD, AC
PETROFF, PM
WEIGMANN, W
DINGLE, R
SAVAGE, A
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325
[3] HERSEE SD, 1983, I PHYS C SER, V64, P281
[4] RECTIFICATION IN ALXGA1-XAS-GAAS N-N HETEROJUNCTION DEVICES
LEE, SC
PEARSON, GL
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (06) : 563 - 568
[5] A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE
MOSS, RH
EVANS, JS
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 129 - 134
[6] TRANSMISSION ELECTRON-MICROSCOPY OF INTERFACES IN 3-5 COMPOUND SEMICONDUCTORS
PETROFF, PM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 973 - 978
[7] HALL-MOBILITY AND HALL FACTOR OF IN0.53GA0.47AS
TAKEDA, Y
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : 383 - 384
[8] METALORGANIC CVD GROWTH OF GAAS-GAAIAS DOUBLE HETEROJUNCTION LASERS HAVING LOW INTERFACIAL RECOMBINATION AND LOW THRESHOLD CURRENT
THRUSH, EJ
SELWAY, PR
HENSHALL, GD
[J]. ELECTRONICS LETTERS, 1979, 15 (05) : 156 - 158
[9] PRELIMINARY CW RELIABILITY MEASUREMENTS ON GAAS-(GAAL)AS STRIPE LASERS GROWN BY METAL-ORGANIC CVD
THRUSH, EJ
WHITEAWAY, JEA
[J]. ELECTRONICS LETTERS, 1979, 15 (20) : 666 - 667
[10] THRUSH EJ, 1981, I PHYS C SER, V56, P337