PRELIMINARY CW RELIABILITY MEASUREMENTS ON GAAS-(GAAL)AS STRIPE LASERS GROWN BY METAL-ORGANIC CVD

被引：6

作者：

THRUSH, EJ

WHITEAWAY, JEA

机构：

[1] Standard Telecommunication Laboratories, Harlow, Essex

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 20期

关键词：

Reliability; Semiconductor junction lasers;

D O I：

10.1049/el:19790473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxide-insulated 20 µm planar stripe-geometry lasers were fabricated from a double heterostructure GaAs-(GaAl)As wafer grown by metal-organic chemical vapour deposition. Preliminary c.w. life tests have been carried out on these lasers, and 1400 h of operation has been achieved with only 19% increase in threshold current. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：666 / 667

页数：2

共 7 条

[1] BASS SJ, 1976, 6TH P INT S GALL ARS
[2] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468
[3] VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 473 - 475
[4] DUPUIS RD, 1978, APPL PHYS LETT, V32, P405
[5] INTERFACIAL RECOMBINATION IN GAALAS-GAAS HETEROSTRUCTURES
NELSON, RJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1475 - 1477
[6] METALORGANIC CVD GROWTH OF GAAS-GAAIAS DOUBLE HETEROJUNCTION LASERS HAVING LOW INTERFACIAL RECOMBINATION AND LOW THRESHOLD CURRENT
THRUSH, EJ
SELWAY, PR
HENSHALL, GD
[J]. ELECTRONICS LETTERS, 1979, 15 (05) : 156 - 158
[7] VEENVLIET H, 1978, OCT IEEE SEM LAS C S

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