NOVEL HIGH-SPEED TRANSISTOR USING ELECTRON-WAVE DIFFRACTION

被引：58

作者：

FURUYA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.339629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1492 / 1494

页数：3

共 11 条

[1]

BORN M, 1970, PRINCIPLES OPTICS, pCH8

[2] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].

CAPASSO, F ;

KIEHL, RA .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1366-1368

[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[4] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED [J].

HEIBLUM, M .

SOLID-STATE ELECTRONICS, 1981, 24 (04) :343-366

[5]

IMAMURA K, 1986, 18TH P INT C SOL STA, P765

[6]

MARCUSE D, 1972, LIGHT TRANSMISSION O, pCH2

[7] OPERATION OF TUNNEL-EMISSION DEVICES [J].

MEAD, CA .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :646-&

[8] NOVEL TRIODE DEVICE USING METAL-INSULATOR SUPERLATTICE PROPOSED FOR HIGH-SPEED RESPONSE [J].

NAKATA, Y ;

ASADA, M ;

SUEMATSU, Y .

ELECTRONICS LETTERS, 1986, 22 (01) :58-59

[9] INGAAS/INALAS HOT-ELECTRON TRANSISTOR [J].

REDDY, UK ;

CHEN, J ;

PENG, CK ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 48 (26) :1799-1801

[10]

Schiff L I, 1968, QUANTUM MECHANICS

← 1 2 →