INGAAS/INALAS HOT-ELECTRON TRANSISTOR

被引：27

作者：

REDDY, UK

CHEN, J

PENG, CK

MORKOC, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 26期

关键词：

D O I：

10.1063/1.96791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1799 / 1801

页数：3

共 10 条

[1]

CHANG KY, 1982, APPL PHYS LETT, V40, P423

[2]

EASTMAN LF, 1980, ELECTRON LETT, V16, P545

[3] HOT-ELECTRON SPECTROSCOPY [J].

HAYES, JR ;

LEVI, AFJ ;

WIEGMANN, W .

ELECTRONICS LETTERS, 1984, 20 (21) :851-852

[4] HOT-ELECTRON SPECTROSCOPY OF GAAS [J].

HAYES, JR ;

LEVI, AFJ ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1985, 54 (14) :1570-1572

[5] DIRECT OBSERVATION OF BALLISTIC TRANSPORT IN GAAS [J].

HEIBLUM, M ;

NATHAN, MI ;

THOMAS, DC ;

KNOEDLER, CM .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2200-2203

[6] INJECTED-HOT-ELECTRON TRANSPORT IN GAAS [J].

LEVI, AFJ ;

HAYES, JR ;

PLATZMAN, PM ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2071-2073

[7] SUBPICOSECOND BASE TRANSIT-TIME OBSERVED IN A HOT-ELECTRON TRANSISTOR (HET) [J].

MUTO, S ;

IMAMURA, K ;

YOKOYAMA, N ;

HIYAMIZU, S ;

NISHI, H .

ELECTRONICS LETTERS, 1985, 21 (13) :555-556

[8] IMPORTANCE OF BOUNDARY-CONDITIONS TO CONDUCTION IN SHORT SAMPLES [J].

ROSENBERG, JJ ;

YOFFA, EJ ;

NATHAN, MI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :941-944

[9] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].

SHUR, MS ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683

[10] A NEW FUNCTIONAL, RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET) [J].

YOKOYAMA, N ;

IMAMURA, K ;

MUTO, S ;

HIYAMIZU, S ;

NISHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11) :L853-L853

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