HOT-ELECTRON SPECTROSCOPY

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] EASTMAN LF, 1981, 9TH P INT C GAAS REL, P245

[3] IMPORTANCE OF ELECTRON-SCATTERING WITH COUPLED PLASMON-OPTICAL PHONON MODES IN GAAS PLANAR-DOPED BARRIER TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (12) : 440 - 443

[4] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 810 - 812

[5] MALIK RJ, 1982, 2ND INT S MOL BEAM E, P29

[6] Pines D., 1966, THEORY QUANTUM LIQUI

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] EASTMAN LF, 1981, 9TH P INT C GAAS REL, P245

[3] IMPORTANCE OF ELECTRON-SCATTERING WITH COUPLED PLASMON-OPTICAL PHONON MODES IN GAAS PLANAR-DOPED BARRIER TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (12) : 440 - 443

[4] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 810 - 812

[5] MALIK RJ, 1982, 2ND INT S MOL BEAM E, P29

[6] Pines D., 1966, THEORY QUANTUM LIQUI