IMPORTANCE OF ELECTRON-SCATTERING WITH COUPLED PLASMON-OPTICAL PHONON MODES IN GAAS PLANAR-DOPED BARRIER TRANSISTORS

被引：44

作者：

HOLLIS, MA

PALMATEER, SC

EASTMAN, LF

DANDEKAR, NV

SMITH, PM

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[2] GE,ELECTR LAB,SYRACUSE,NY 13221

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 12期

关键词：

D O I：

10.1109/EDL.1983.25795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：440 / 443

页数：4

相关论文

共 23 条

[1] GAAIAS-GAAS BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTOR
ANKRI, D
EASTMAN, LF
[J]. ELECTRONICS LETTERS, 1982, 18 (17) : 750 - 751
[2] MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE
AWANO, Y
TOMIZAWA, K
HASHIZUME, N
KAWASHIMA, M
[J]. ELECTRONICS LETTERS, 1982, 18 (03) : 133 - 135
[3] BLATT FJ, 1968, PHYSICS ELECTRONIC C
[4] ONSET OF DIFFUSION-DRIFT EMISSION REGIME AND THE TRANSITION FROM EXPONENTIAL TO LINEAR CURRENT-VOLTAGE CHARACTERISTIC OF TRIANGULAR BARRIER SEMICONDUCTOR STRUCTURES
BUOT, FA
KRUMHANSL, JA
SOCHA, JB
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (09) : 814 - 816
[5] QUANTUM-MECHANICAL REFLECTION AT TRIANGULAR PLANAR-DOPED POTENTIAL BARRIERS FOR TRANSISTORS
CHANDRA, A
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 9165 - 9169
[6] HESS K, 1980, PHYSICS NONLINEAR TR
[7] HOLLIS MA, 1983, THESIS CORNELL U ITH
[8] KASIYAN AI, 1981, SOV PHYS SEMICOND+, V15, P1142
[9] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES
KAZARINOV, RF
LURYI, S
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 810 - 812
[10] ELECTRON-SCATTERING INTERACTION WITH COUPLED PLASMON-POLAR-PHONON MODES IN DEGENERATE SEMICONDUCTORS
KIM, ME
DAS, A
SENTURIA, SD
[J]. PHYSICAL REVIEW B, 1978, 18 (12): : 6890 - 6899