IMPORTANCE OF BOUNDARY-CONDITIONS TO CONDUCTION IN SHORT SAMPLES

[1] ON THE NATURE OF BALLISTIC TRANSPORT IN SHORT-CHANNEL SEMICONDUCTOR-DEVICES [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 209 - 210

[2] BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE [J]. ELECTRONICS LETTERS, 1980, 16 (13) : 524 - 525

[3] FRENSLEY WR, 1980, T ELECTRON DEVICES L, V1, P137

[4] KIM CK, 1979, SOLID STATE ELECTRON, V13, P1577

[5] Electrical discharges in gases Part II. Fundamental phenomena in electrical discharges [J]. REVIEWS OF MODERN PHYSICS, 1931, 3 (02) : 0191 - 0257

[6] POLAR MODE SCATTERING IN BALLISTIC TRANSPORT GAAS DEVICES [J]. ELECTRON DEVICE LETTERS, 1980, 1 (04): : 54 - 54

[7] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1677 - 1683

[1] ON THE NATURE OF BALLISTIC TRANSPORT IN SHORT-CHANNEL SEMICONDUCTOR-DEVICES [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 209 - 210

[2] BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE [J]. ELECTRONICS LETTERS, 1980, 16 (13) : 524 - 525

[3] FRENSLEY WR, 1980, T ELECTRON DEVICES L, V1, P137

[4] KIM CK, 1979, SOLID STATE ELECTRON, V13, P1577

[5] Electrical discharges in gases Part II. Fundamental phenomena in electrical discharges [J]. REVIEWS OF MODERN PHYSICS, 1931, 3 (02) : 0191 - 0257

[6] POLAR MODE SCATTERING IN BALLISTIC TRANSPORT GAAS DEVICES [J]. ELECTRON DEVICE LETTERS, 1980, 1 (04): : 54 - 54

[7] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1677 - 1683