BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE

[1] ALLEY GD, 1979, AUG CORN IEEE C T

[2] BOZLER CO, 1979, AUG CORN IEEE C T

[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582

[4] ELTA M, COMMUNICATION

[5] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1677 - 1683

[6] SHUR MS, 1979, AUG CORN IEEE C T

[7] ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS [J]. ELECTRONICS LETTERS, 1979, 15 (24) : 800 - 801

[1] ALLEY GD, 1979, AUG CORN IEEE C T

[2] BOZLER CO, 1979, AUG CORN IEEE C T

[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582

[4] ELTA M, COMMUNICATION

[5] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1677 - 1683

[6] SHUR MS, 1979, AUG CORN IEEE C T

[7] ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS [J]. ELECTRONICS LETTERS, 1979, 15 (24) : 800 - 801