A NEW FUNCTIONAL, RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET)

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[2] NOVEL REAL-SPACE HOT-ELECTRON TRANSFER DEVICES [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 334 - 336

[3] SUBPICOSECOND BASE TRANSIT-TIME OBSERVED IN A HOT-ELECTRON TRANSISTOR (HET) [J]. ELECTRONICS LETTERS, 1985, 21 (13) : 555 - 556

[4] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 508 - 510

[5] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 588 - 590

[6] YOKOYAMA N, 1984, JPN J APPL PHYS 2, V23, pL311, DOI 10.1143/JJAP.23.L311

[7] YOKOYAMA N, INT ELECTRON DEVICES, P532

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[2] NOVEL REAL-SPACE HOT-ELECTRON TRANSFER DEVICES [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 334 - 336

[3] SUBPICOSECOND BASE TRANSIT-TIME OBSERVED IN A HOT-ELECTRON TRANSISTOR (HET) [J]. ELECTRONICS LETTERS, 1985, 21 (13) : 555 - 556

[4] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 508 - 510

[5] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 588 - 590

[6] YOKOYAMA N, 1984, JPN J APPL PHYS 2, V23, pL311, DOI 10.1143/JJAP.23.L311

[7] YOKOYAMA N, INT ELECTRON DEVICES, P532