共 11 条
- [3] A FOCUSED ION-BEAM VACUUM LITHOGRAPHY PROCESS COMPATIBLE WITH GAS SOURCE MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1467 - 1470
- [4] HARRIOTT LR, 1989, IN PRESS FAL P MAT R
- [5] CHEMICAL ETCHING OF GAAS AND INP BY CHLORINE - THE THERMODYNAMICALLY PREDICTED DEPENDENCE ON CL2 PRESSURE AND TEMPERATURE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05): : 1216 - 1226
- [6] PANISH MB, 1989, ANNU REV MATER SCI, V19, P209
- [7] GAAS GROWTH USING AN MBE SYSTEM CONNECTED WITH A 100 KV UHV MASKLESS ION IMPLANTER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L599 - L601
- [8] TANEYA M, 1989, IN PRESS FAL P MAT R