VACUUM LITHOGRAPHY FOR INSITU FABRICATION OF BURIED SEMICONDUCTOR MICROSTRUCTURES

被引:28
作者
WANG, YL
TEMKIN, H
HARRIOTT, LR
HAMM, RA
WEINER, JS
机构
[1] AT and T Bell Laboratories, Murray Hill
关键词
D O I
10.1063/1.104082
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have developed a complete lithographic process combining focused ion beam writing, dry etching, and molecular beam epitaxy for in situ preparation of buried InP-based microstructures. A focused ion beam is used to locally remove an ultrathin oxide imaging layer grown in situ on the surface of InP. The pattern is transferred into the underlying semiconductor by free Cl2 etching with the patterned oxide layer acting as an etch mask. After removal of the oxide mask, GaInAs/InP heterostructures with excellent morphology and high luminescence efficiency can be grown on the patterned substrate. The entire process of mask formation, lithography, and regrowth can be carried out in situ repeatedly, and used for creating fully buried microstructures.
引用
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页码:1672 / 1674
页数:3
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