ULTRATHIN SEMICONDUCTOR LAYER MASKS FOR HIGH-VACUUM FOCUSED GA ION-BEAM LITHOGRAPHY

被引：22

作者：

TEMKIN, H

HARRIOTT, LR

PANISH, MB

机构：

来源：

关键词：

D O I：

10.1063/1.99104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1478 / 1480

页数：3

共 13 条

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[7] FOCUSED ION-BEAM TECHNOLOGY AND APPLICATIONS
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[8] OCHIAI Y, 1985, J VAC SCI TECHNOL B, V3, P671
[9] OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
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TEMKIN, H
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 164 - 166
[10] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 657 - 665