USING FOCUSED ION-BEAM DAMAGE PATTERNS TO PHOTOELECTROCHEMICALLY ETCH FEATURES IN III-V-MATERIALS

被引：20

作者：

CUMMINGS, KD

HARRIOTT, LR

CHI, GC

OSTERMAYER, FW

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.96735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：659 / 661

页数：3

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[1] INTEGRATED-CIRCUIT REPAIR USING FOCUSED ION-BEAM MILLING
HARRIOTT, LR
WAGNER, A
FRITZ, F
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 181 - 184
[2] THE PHOTO-ELECTROCHEMICAL OXIDATION OF (100), (111), AND (111) N-INP AND N-GAAS
KOHL, PA
WOLOWODIUK, C
OSTERMAYER, FW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2288 - 2293
[3] HOLOGRAPHIC PHOTOELECTROCHEMICAL ETCHING OF DIFFRACTION GRATINGS IN N-INP AND N-GALNASP FOR DISTRIBUTED FEEDBACK LASERS
LUM, RM
GLASS, AM
OSTERMAYER, FW
KOHL, PA
BALLMAN, AA
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) : 39 - 44
[4] HOLE TRANSPORT-EQUATION ANALYSIS OF PHOTOELECTROCHEMICAL ETCHING RESOLUTION
OSTERMAYER, FW
KOHL, PA
LUM, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4390 - 4396
[5] PHOTO-ELECTROCHEMICAL ETCHING OF INTEGRAL LENSES ON INGAASP/INP LIGHT-EMITTING-DIODES
OSTERMAYER, FW
KOHL, PA
BURTON, RH
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 642 - 644
[6] APPLICATIONS OF FOCUSED ION-BEAMS
WAGNER, A
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 355 - 362