LOW-POWER ION-BEAM-ASSISTED ETCHING OF INDIUM-PHOSPHIDE

被引：32

作者：

DEMEO, NL

DONNELLY, JP

ODONNELL, FJ

GEIS, MW

OCONNOR, KJ

机构：

来源：

关键词：

D O I：

10.1016/0168-583X(85)90475-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：814 / 819

页数：6

共 19 条

[1] SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS
BARKER, RA
MAYER, TM
BURTON, RH
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 583 - 586
[2] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338
[3] ETCHING OF GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE IN RF DISCHARGES THROUGH MIXTURES OF TRICHLOROFLUOROMETHANE AND OXYGEN
BURTON, RH
HOLLIEN, CL
MARCHUT, L
ABYS, SM
SMOLINSKY, G
GOTTSCHO, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6663 - 6671
[4] CLAWSON AR, 1978, NOSC592 NAV OC SYST
[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[6] DIRECTIONAL REACTIVE-ION-ETCHING OF INP WITH CL-2 CONTAINING GASES
COLDREN, LA
RENTSCHLER, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 225 - 230
[7] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA
DONNELLY, VM
FLAMM, DL
TU, CW
IBBOTSON, DE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537
[8] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE
GEIS, MW
LINCOLN, GA
EFREMOW, N
PIACENTINI, WJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1390 - 1393
[9] GLANG R, 1970, HDB THIN FILM TECHNO, pCH1
[10] DIRECT TRANSFER OF RESIST GRATING PATTERNS ONTO INP BY REACTIVE-ION ETCHING USING CCL4/O2
HIRATA, K
MIKAMI, O
SAITOH, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 45 - 48