DIRECT TRANSFER OF RESIST GRATING PATTERNS ONTO INP BY REACTIVE-ION ETCHING USING CCL4/O2

被引：3

作者：

HIRATA, K

MIKAMI, O

SAITOH, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 01期

关键词：

INDIUM PHOSPHIDE;

D O I：

10.1116/1.582913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：45 / 48

页数：4

共 17 条

[1] GAINASP INP INTEGRATED LASER WITH BUTT-JOINTED BUILT-IN DISTRIBUTED-BRAGG-REFLECTION WAVEGUIDE
ABE, Y
KISHINO, K
SUEMATSU, Y
ARAI, S
[J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 945 - 947
[2] SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS
BARKER, RA
MAYER, TM
BURTON, RH
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 583 - 586
[3] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338
[4] CCL4 AND CL-2 PLASMA-ETCHING OF III-V-SEMICONDUCTORS AND THE ROLE OF ADDED O-2
BURTON, RH
SMOLINSKY, G
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) : 1599 - 1604
[5] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
COLDREN, LA
IGA, K
MILLER, BI
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683
[6] DIRECTIONAL REACTIVE-ION-ETCHING OF INP WITH CL-2 CONTAINING GASES
COLDREN, LA
RENTSCHLER, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 225 - 230
[7] CARBON-TETRACHLORIDE PLASMA-ETCHING OF GAAS AND INP - A KINETIC-STUDY UTILIZING NONPERTURBATIVE OPTICAL TECHNIQUES
GOTTSCHO, RA
SMOLINSKY, G
BURTON, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5908 - 5919
[8] REACTIVE-ION ETCHING OF GAAS AND INP USING CCL2F2-AR-O2
HU, EL
HOWARD, RE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1022 - 1024
[9] CW OPERATION OF DFB-BH GAINASP INP LASERS IN 1,5-MU-M WAVELENGTH REGION
MATSUOKA, T
NAGAI, H
ITAYA, Y
NOGUCHI, Y
SUZUKI, Y
IKEGAMI, T
[J]. ELECTRONICS LETTERS, 1982, 18 (01) : 27 - 28
[10] 1.55 MU-M GAINASP-INP DISTRIBUTED FEEDBACK LASERS
MIKAMI, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L488 - L490

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