REACTIVE-ION ETCHING OF GAAS AND INP USING CCL2F2-AR-O2

[1] NEW UNDERCUTTING PHENOMENON IN PLASMA ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (11) : 1825 - 1826

[2] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[3] 400-A LINEWIDTH E-BEAM LITHOGRAPHY ON THICK SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 592 - 594

[4] HOWARD RE, 1980, 1980 TOP M INT GUID

[5] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 319 - 326

[6] MELLIARSMITH CM, 1978, THIN FILM PROCESSES, P527

[7] MOGAB CJ, 1977, J ELECTROCHEM SOC, V126, P1766

[8] PROBER D, COMMUNICATION

[9] COMPETITIVE MECHANISMS IN REACTIVE ION ETCHING IN A CF4 PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 464 - 469

[10] SMOLINSKY G, COMMUNICATION

[1] NEW UNDERCUTTING PHENOMENON IN PLASMA ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (11) : 1825 - 1826

[2] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[3] 400-A LINEWIDTH E-BEAM LITHOGRAPHY ON THICK SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 592 - 594

[4] HOWARD RE, 1980, 1980 TOP M INT GUID

[5] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 319 - 326

[6] MELLIARSMITH CM, 1978, THIN FILM PROCESSES, P527

[7] MOGAB CJ, 1977, J ELECTROCHEM SOC, V126, P1766

[8] PROBER D, COMMUNICATION

[9] COMPETITIVE MECHANISMS IN REACTIVE ION ETCHING IN A CF4 PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 464 - 469

[10] SMOLINSKY G, COMMUNICATION