PROFILE CONTROL BY REACTIVE SPUTTER ETCHING

[1] ABE H, 1975, J JAPAN SOC APPL P S, V44, P287

[2] BERSIN RL, 1976, SOLID STATE TECHNOL, V19, P31

[3] PROPERTIES OF FLUOROCARBON FILMS PREPARED BY RF SPUTTERING AND PLASMA POLYMERIZATION IN INERT AND ACTIVE GAS [J]. THIN SOLID FILMS, 1977, 41 (03) : 329 - 339

[4] DRY PROCESS TECHNOLOGY (REACTIVE ION ETCHING) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05): : 1023 - 1029

[5] CHANG THP, 1977, ELECTRONICS, V50, P89

[6] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[7] FLANDERS DC, APPL PHYS LETT

[8] ION-BEAM ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 28 - 35

[9] GLORSEN PG, 1976, SOLID STATE TECHNOL, V18, P68

[10] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[1] ABE H, 1975, J JAPAN SOC APPL P S, V44, P287

[2] BERSIN RL, 1976, SOLID STATE TECHNOL, V19, P31

[3] PROPERTIES OF FLUOROCARBON FILMS PREPARED BY RF SPUTTERING AND PLASMA POLYMERIZATION IN INERT AND ACTIVE GAS [J]. THIN SOLID FILMS, 1977, 41 (03) : 329 - 339

[4] DRY PROCESS TECHNOLOGY (REACTIVE ION ETCHING) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05): : 1023 - 1029

[5] CHANG THP, 1977, ELECTRONICS, V50, P89

[6] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[7] FLANDERS DC, APPL PHYS LETT

[8] ION-BEAM ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 28 - 35

[9] GLORSEN PG, 1976, SOLID STATE TECHNOL, V18, P68

[10] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147