ETCHING OF GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE IN RF DISCHARGES THROUGH MIXTURES OF TRICHLOROFLUOROMETHANE AND OXYGEN

[1] SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 583 - 586

[2] CCL4 AND CL-2 PLASMA-ETCHING OF III-V-SEMICONDUCTORS AND THE ROLE OF ADDED O-2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) : 1599 - 1604

[3] PLASMA SEPARATION OF INGAASP-INP LIGHT-EMITTING-DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 411 - 412

[4] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P16

[5] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[6] SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1259 - 1265

[7] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537

[8] MULTIPLE-ETCHANT LOADING EFFECT AND SILICON ETCHING IN CLF3 AND RELATED MIXTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2755 - 2760

[9] Flamm DL, 1981, PLASMA CHEM PLASMA P, V1, P37, DOI DOI 10.1007/BF00566374

[10] Gottscho R. A., 1983, Plasma Chemistry and Plasma Processing, V3, P193, DOI 10.1007/BF00566020

[1] SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 583 - 586

[2] CCL4 AND CL-2 PLASMA-ETCHING OF III-V-SEMICONDUCTORS AND THE ROLE OF ADDED O-2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) : 1599 - 1604

[3] PLASMA SEPARATION OF INGAASP-INP LIGHT-EMITTING-DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 411 - 412

[4] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P16

[5] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[6] SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1259 - 1265

[7] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537

[8] MULTIPLE-ETCHANT LOADING EFFECT AND SILICON ETCHING IN CLF3 AND RELATED MIXTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2755 - 2760

[9] Flamm DL, 1981, PLASMA CHEM PLASMA P, V1, P37, DOI DOI 10.1007/BF00566374

[10] Gottscho R. A., 1983, Plasma Chemistry and Plasma Processing, V3, P193, DOI 10.1007/BF00566020