MULTIPLE-ETCHANT LOADING EFFECT AND SILICON ETCHING IN CLF3 AND RELATED MIXTURES

[1] DONNELLY VM, 1981, SOLID STATE TECHNOL, V24, P161

[2] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[3] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[4] PLASMA REACTOR DESIGN FOR SELECTIVE ETCHING OF SIO2 ON SI [J]. SOLID-STATE ELECTRONICS, 1976, 19 (12) : 1039 - 1040

[5] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 721 - 730

[6] MOGAB CJ, 1977, J ELECTROCHEM SOC, V124, P1262, DOI 10.1149/1.2133542

[7] HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1620 - 1624

[8] MORAN JM, 1981, SOLID STATE TECHNOL, V22, P195

[1] DONNELLY VM, 1981, SOLID STATE TECHNOL, V24, P161

[2] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[3] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[4] PLASMA REACTOR DESIGN FOR SELECTIVE ETCHING OF SIO2 ON SI [J]. SOLID-STATE ELECTRONICS, 1976, 19 (12) : 1039 - 1040

[5] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 721 - 730

[6] MOGAB CJ, 1977, J ELECTROCHEM SOC, V124, P1262, DOI 10.1149/1.2133542

[7] HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1620 - 1624

[8] MORAN JM, 1981, SOLID STATE TECHNOL, V22, P195