A FOCUSED ION-BEAM VACUUM LITHOGRAPHY PROCESS COMPATIBLE WITH GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：21

作者：

HARRIOTT, LR

TEMKIN, H

HAMM, RA

WEINER, J

PANISH, MB

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1467 / 1470

页数：4

共 10 条

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[3] USING FOCUSED ION-BEAM DAMAGE PATTERNS TO PHOTOELECTROCHEMICALLY ETCH FEATURES IN III-V-MATERIALS
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CHI, GC
OSTERMAYER, FW
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[4] HARRIOTT LR, 1988, J VAC SCI TECHNOL B, V5, P207
[5] HAYASHI I, 1988, EMERGING TECHNOLOGIE
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[7] SUGIMOTO Y, 1989, P SPIE, V1039, P52
[8] CHEMICALLY ENHANCED FOCUSED ION-BEAM ETCHING OF DEEP GROOVES AND LASER-MIRROR FACETS IN GAAS UNDER CL-2 GAS IRRADIATION USING A FINE NOZZLE
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (26) : 1891 - 1893
[9] INSITU PATTERN-FORMATION AND HIGH-QUALITY OVERGROWTH BY GAS SOURCE MOLECULAR-BEAM EPITAXY
TEMKIN, H
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WEINER, J
PANISH, MB
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (15) : 1463 - 1465
[10] Ziegler J.F., 1985, STOPPING RANGES IONS