ION-BEAM DAMAGE-INDUCED MASKING FOR PHOTOELECTROCHEMICAL ETCHING OF III-V SEMICONDUCTORS

被引:8
作者
CHI, GC
OSTERMAYER, FW
CUMMINGS, KD
HARRIOTT, LR
机构
关键词
D O I
10.1063/1.337525
中图分类号
O59 [应用物理学];
学科分类号
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页码:4012 / 4014
页数:3
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