GAAS GROWTH USING AN MBE SYSTEM CONNECTED WITH A 100 KV UHV MASKLESS ION IMPLANTER

被引：33

作者：

TAKAMORI, A

MIYAUCHI, E

ARIMOTO, H

BAMBA, Y

HASHIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.L599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L599 / L601

页数：3

共 9 条

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[3] EISEN FH, 1975, 4TH P INT C ION IMPL, P3
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[5] FET FABRICATION USING MASKLESS ION-IMPLANTATION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 916 - 920
[6] MIYAUCHI E, 1983, JPN J APPL PHYS 2, V22, pL225
[7] SELECTIVE SI AND BE IMPLANTATION IN GAAS USING A 100 KV MASS-SEPARATING FOCUSED ION-BEAM SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE
MIYAUCHI, E
ARIMOTO, H
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1113 - 1116
[8] A 100 KV MASKLESS ION-IMPLANTATION SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE FOR III-V-COMPOUND SEMICONDUCTORS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05): : L287 - L288
[9] GAAS MOLECULAR-BEAM EPITAXY ON BE IMPLANTED GAAS-LAYERS
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HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (08): : L520 - L522