GAAS MOLECULAR-BEAM EPITAXY ON BE IMPLANTED GAAS-LAYERS

被引：1

作者：

TAKAMORI, A

MIYAUCHI, E

ARIMOTO, H

BAMBA, Y

HASHIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 08期

关键词：

D O I：

10.1143/JJAP.22.L520

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semiconducting gallium arsenide

引用

页码：L520 / L522

页数：3

共 10 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
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[2] PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS
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[4] EISEN FH, 1975, 4TH P INT C ION IMPL, P3
[5] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
[6] THEORETICAL CONSIDERATIONS IN LATERAL DAMAGE DISTRIBUTION FORMED BY ION-IMPLANTATION
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[7] MIYAUCHI E, 1983, JPN J APPL PHYS 2, V22, pL225
[8] MIYAUCHI E, 1983, JPN J APPL PHYS, V22, pL290
[9] RAMAN-SPECTRA FROM SI AND SN IMPLANTED GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5870 - 5872
[10] MONOLITHICALLY INTEGRATED OPTICAL REPEATER
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