BAND-GAP SHRINKAGE IN GAINAS/GAINASP/INP MULTIQUANTUM WELL LASERS

被引:22
作者
PARK, SH [1 ]
SHIM, JI [1 ]
KUDO, K [1 ]
ASADA, M [1 ]
ARAI, S [1 ]
机构
[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
关键词
D O I
10.1063/1.352129
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated a band gap shrinkage in both lattice-matched and compressive strained GaInAs/GaInAsP/InP multi-quantum well lasers. The band gap shrinkage is obtained from the broadening of the low energy side in the spectrum by considering effects of an intraband scattering and a fundamental band edge. It amounts to 20-25 meV at sheet carrier densities of above 10(12) cm-2, and shows n1/1,3 dependence at low carrier densities and n1/3 dependence at higher densities. These dependencies agree well with theoretical predictions in the quantum well.
引用
收藏
页码:279 / 281
页数:3
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