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SPONTANEOUS EMISSION AND GAIN IN GAALAS QUANTUM-WELL LASERS

被引：30
作者：
KESLER, MP
HARDER, C
机构：
[1] IBM Research Division, Zurich Research Laboratory, 8803, Rüschlikon
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 06期
关键词：
D O I：
10.1109/3.90009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on measurements of spontaneous emission over a wide range of carrier densities from a GaAlAs quantum well laser diode. From these data, information on the optical gain and linewidth enhancement factor is obtained. A simple model is developed which describes the important features in our measurements. Comparison of the model to our measurements allows quantitative information about bandgap shrinkage and lifetime broadening to be obtained.
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页码：1812 / 1816
页数：5
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