THEORY OF GAIN, MODULATION RESPONSE, AND SPECTRAL LINEWIDTH IN ALGAAS QUANTUM WELL LASERS

被引：212

作者：

ARAKAWA, Y

YARIV, A

机构：

[1] California Inst of Technology,, Pasadena, CA, USA, California Inst of Technology, Pasadena, CA, USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 10期

关键词：

QUANTUM WELL LASERS;

D O I：

10.1109/JQE.1985.1072555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1666 / 1674

页数：9

共 17 条

[1] QUANTUM NOISE AND DYNAMICS IN QUANTUM WELL AND QUANTUM WIRE LASERS [J].

ARAKAWA, Y ;

VAHALA, K ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1984, 45 (09) :950-952

[2] GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS [J].

ASADA, M ;

KAMEYAMA, A ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) :745-753

[3]

BURT G, 1984, ELECTRON LETT, V20, P27

[4] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

HOLONYAK, N ;

REZEK, EA ;

CHIN, R .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :295-297

[5] FUNDAMENTAL LINE BROADENING OF SINGLE-MODE (GAAL)AS DIODE-LASERS [J].

FLEMING, MW ;

MOORADIAN, A .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :511-513

[6] THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].

HENRY, CH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :259-264

[7] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

HOLONYAK, N ;

KOLBAS, RM ;

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[8] POLARIZATION-DEPENDENT GAIN-CURRENT RELATIONSHIP IN GAAS-ALGAAS MQW LASER-DIODES [J].

KOBAYASHI, H ;

IWAMURA, H ;

SAKU, T ;

OTSUKA, K .

ELECTRONICS LETTERS, 1983, 19 (05) :166-168

[9] DIRECT AMPLITUDE-MODULATION OF SHORT-CAVITY GAAS-LASERS UP TO X-BAND FREQUENCIES [J].

LAU, KY ;

BARCHAIM, N ;

URY, I ;

HARDER, C ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :1-3

[10] THRESHOLD CURRENTS FOR ALGAAS QUANTUM WELL LASERS [J].

SUGIMURA, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (04) :336-343

← 1 2 →