POLARIZATION-DEPENDENT GAIN-CURRENT RELATIONSHIP IN GAAS-ALGAAS MQW LASER-DIODES

被引：49

作者：

KOBAYASHI, H

IWAMURA, H

SAKU, T

OTSUKA, K

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 05期

关键词：

D O I：

10.1049/el:19830116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：166 / 168

页数：3

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共 10 条

[1] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21
[2] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS
DUTTA, NK
[J]. ELECTRONICS LETTERS, 1982, 18 (11) : 451 - 453
[3] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS
HAKKI, BW
PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1299 - 1306
[4] REFLECTIVITY OF MODE AT FACET AND OSCILLATION MODE IN DOUBLE-HETEROSTRUCTURE INJECTION LASERS
IKEGAMI, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (06) : 470 - +
[5] PHOTO-LUMINESCENCE OF AN ALAS-GAAS SUPER-LATTICE GROWN BY MBE IN THE 0.7-0.8-MU-M WAVELENGTH REGION
ISHIBASHI, T
SUZUKI, Y
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L623 - L626
[6] IWAMURA H, 1982, 2ND P INT S MBE CST, P47
[7] IWAMURA H, UNPUB SPECTRUM STUDI
[8] SUZUKI Y, UNPUB J ELECTRON MAT
[9] CW NARROW BEAM (ALGA)AS MULTIQUANTUM-WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
HARTMAN, RL
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (07) : 502 - 504
[10] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 786 - 788