AIR STABILIZED (001) P-TYPE GAAS FABRICATED BY MOLECULAR-BEAM EPITAXY WITH REDUCED SURFACE-STATE DENSITY

被引：23

作者：

YAN, D

LOOK, E

YIN, X

POLLAK, FH

WOODALL, JM

机构：

[1] CUNY BROOKLYN COLL,NEW YORK STATE CTR ADV TECHNOL ULTRAFAST PHOTON MAT & APPLICAT,BROOKLYN,NY 11210

[2] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

[3] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.113035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a contactless electromodulation study of undoped/p+ GaAs (001) structures, fabricated by molecular beam epitaxy (MBE), which exhibit reduced surface state densities and surface Fermi level values closer to the band edge in relation to other p- or n-type GaAs (001) surfaces. The temperature dependence of the measured barrier height has been explained by a modified current-transport equation which contains two ''pinning'' levels (0.25 and 0.5 V relative to the valence band). Measurements were carried out in air and also in situ in the ultrahigh vacuum environment of a MBE chamber soon after growth and before the sample was removed to air.

引用

页码：186 / 188

页数：3

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