Effect of impurity phases on the anisotropic transport properties of CeNiSn

被引：52

作者：

Nakamoto, G. ^{[1
]}

Takabatake, T. ^{[1
]}

Bando, Y. ^{[1
]}

Fujii, H. ^{[1
]}

Izawa, K. ^{[2
]}

Suzuki, T. ^{[2
]}

Fujita, T. ^{[2
]}

Minami, A. ^{[2
]}

Oguro, I. ^{[3
]}

Tai, L. T. ^{[4
]}

Menovsky, A. A. ^{[4
]}

机构：

[1] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 724, Japan

[2] Hiroshima Univ, Fac Sci, Higashihiroshima 724, Japan

[3] Univ Tokyo, Inst Solid State Phys, Tokyo 106, Japan

[4] Univ Amsterdam, Van der Waals Zeeman Lab, NL-1012 WX Amsterdam, Netherlands

来源：

PHYSICA B-CONDENSED MATTER | 1995年 / 206卷

关键词：

D O I：

10.1016/0921-4526(94)00602-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the measurements of resistivity, magnetoresistance, thermopower and specific heat on several single crystals of CeNiSn. As impurities of CeNi2Sn2 and Ce oxide increase up to about 3%, both the anisotropy and coherence in transport properties are smeared out. The increase in resistivity below 10 K is stronger for less pure crystal, which suggests strong localization of residual carriers in the pseudogap.

引用

页码：840 / 843

页数：4

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