CHARACTERIZATION OF THE HEAT LOADING OF ND-DOPED YAG, YOS, YLF, AND GGG EXCITED AT DIODE PUMPING WAVELENGTHS

被引:44
作者
COMASKEY, B
MORAN, BD
ALBRECHT, GF
BEACH, RJ
机构
[1] Lawrence Livermore National Laboratory, L-495, Livermore, CA 94550
关键词
D O I
10.1109/3.391089
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The parameter xi (xi) is proposed as an alternative to the traditional solid-state laser media heating parameter, chi (chi), xi is the ratio of heat produced to energy absorbed, and chi is the ratio of heat produced to the maximum stored energy in the upper laser level, The parameter xi is particularly relevant to diode pumped systems, We demonstrate an experimental xi characterization based on the determination of the steady state cooling rate (hence heating rate) of small sample crystals subjected to pump laser heating, Using measured fluorescent lifetimes of the samples and near zero doping (intrinsic) values, the doping independent (zero doping or zero quenching) parameters chi phi and xi phi are determined, The results for all samples are in excellent agreement with calculations based solely on energy defect and nonradiative quenching of the upper level.
引用
收藏
页码:1261 / 1264
页数:4
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