THE LIFETIME OF INJECTED CARRIERS IN AMORPHOUS-SILICON P-N-JUNCTIONS

被引：19

作者：

SNELL, AJ

SPEAR, WE

LECOMBER, PG

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1981年 / 43卷 / 03期

关键词：

D O I：

10.1080/01418638108222106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：407 / 417

页数：11

共 20 条

[1] HOLE DRIFT MOBILITY IN AMORPHOUS SILICON
ALLAN, D
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04): : 381 - 392
[2] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON
ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712
[3] AMORPHOUS SILICON SOLAR-CELLS
CARLSON, DE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 449 - 453
[4] FACTORS INFLUENCING THE EFFICIENCY OF AMORPHOUS-SILICON SOLAR-CELLS
CARLSON, DE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 707 - 717
[5] USE OF P-L-N STRUCTURES IN INVESTIGATIONS OF TRANSIENT RECOMBINATION FROM HIGH INJECTION LEVELS IN SEMICONDUCTORS
DAVIES, LW
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1637 - &
[6] RECENT DEVELOPMENTS IN AMORPHOUS-SILICON P-N-JUNCTION DEVICES
GIBSON, RA
SPEAR, WE
LECOMBER, PG
SNELL, AJ
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 725 - 730
[7] THE CHARACTERISTICS OF HIGH-CURRENT AMORPHOUS-SILICON DIODES
GIBSON, RA
LECOMBER, PG
SPEAR, WE
[J]. APPLIED PHYSICS, 1980, 21 (04): : 307 - 311
[8] POST-INJECTION BARRIER ELECTROMOTIVE FORCE OF P-N JUNCTIONS
GOSSICK, BR
[J]. PHYSICAL REVIEW, 1953, 91 (04): : 1012 - 1013
[9] AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE
HOFFMANN, A
SCHUSTER, K
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 717 - 724
[10] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS
KINGSTON, RH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 829 - 834

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