CRITICAL-BEHAVIOR OF THE ZERO-TEMPERATURE CONDUCTIVITY IN COMPENSATED SILICON, SI-(P,B)

被引：40

作者：

HIRSCH, MJ

THOMANSCHEFSKY, U

HOLCOMB, DF

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.37.8257

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：8257 / 8261

页数：5

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