THERMALLY STIMULATED CURRENT OF CDTE DOPED WITH ZN

被引:6
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FUYUKI, S
HYAKUTAKE, N
HAYAKAWA, S
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10.1143/JJAP.17.851
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O59 [应用物理学];
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页码:851 / 855
页数:5
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共 8 条
[1]  
ABRIKOSOV NK, 1969, SEMICONDUCTING 2 6 4, P31
[2]   THERMALLY STIMULATED CURRENT MEASUREMENT OF TRAPS IN DETECTOR-GRADE CDTE [J].
BARNES, CE ;
ZANIO, K .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (01) :177-181
[3]  
de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361
[4]  
Gettings M., 1973, Radiation Effects, V18, P275, DOI 10.1080/00337577308232135
[5]   DEEP-LEVEL ENERGY SPECTROSCOPY IN P-TYPE CDTE USING TSC MEASUREMENTS [J].
MARTIN, GM ;
FOGARASSY, E ;
FABRE, E .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) :264-266
[6]   REVIEW OF RECENT METHODS FOR DETERMINING TRAP DEPTH FROM GLOW CURVES [J].
SHALGAONKAR, CS ;
NARLIKAR, AV .
JOURNAL OF MATERIALS SCIENCE, 1972, 7 (12) :1465-1471
[7]  
VUL BM, 1973, SOV PHYS SEMICOND+, V6, P1255
[8]  
ZAYACHKIVSKII VP, 1974, SOV PHYS SEMICOND+, V8, P675