CONTRIBUTION OF RESONANT STATES TO THE CONDUCTIVITY OF HGTE

被引:16
作者
SZLENK, K
DZIUBA, Z
GALAZKA, RR
机构
[1] Institute of Physics, Polish Academy of Sciences, Warsaw
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 91卷 / 01期
关键词
D O I
10.1002/pssb.2220910127
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Measurements of the Hall effect and conductivity are performed on HgTe in the temperature range 4 to 40 K and magnetic field up to 70 kG. The analysis of conductivity tensor versus magnetic field enables to establish the influence of different types of carriers on the total conductivity. The concentration of the conduction band electrons versus temperature is determined from the low magnetic field experimental data. By comparing this dependence with the theoretical one the position and concentration of discrete acceptor levels are determined. It is found that the energy of the acceptor level decreases from 2.3 to 1.7 meV when the acceptor concentration increases from 2 × 1018 to 7 × 1018 cm−3. A significant contribution of the low‐mobility electrons (μ < 5 × 103 cm2/Vs) to the conduction is established. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:255 / 261
页数:7
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