RESONANT ACCEPTOR LEVEL IN ZERO-GAP SEMICONDUCTORS - SINGLE AND MULTIPLE-SCATTERING EFFECTS

被引：26

作者：

BASTARD, G ^{[1
]}

机构：

[1] ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75231 PARIS 5,FRANCE

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1977年 / 80卷 / 02期

关键词：

D O I：

10.1002/pssb.2220800227

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：641 / 650

页数：10

共 18 条

[1] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS
BALDERESCHI, A
LIPARI, NO
[J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2697 - 2709
[2] RESONANT ACCEPTOR LEVELS IN ZERO-GAP SEMICONDUCTORS UNDER UNIAXIAL STRESS
BASTARD, G
NOZIERES, P
[J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2560 - 2564
[3] BASTARD G, 1974, 12TH P INT C PHYS SE, P1162
[4] QUANTUM OSCILLATIONS OF HALL EFFECT OF A FERMION GAS WITH RANDOM IMPURITY SCATTERING
BASTIN, A
LEWINER, C
BETBEDER.O
NOZIERES, P
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) : 1811 - &
[5] BIR GL, 1962, SOV PHYS-SOL STATE, V3, P2221
[6] FINCK G, 1972, 11 P INT C PHYS SEM, P944
[7] GELMONT BL, 1972, SOV PHYS SEMICOND+, V5, P1905
[8] GELMONT BL, 1972, SOVIET PHYS J EXPT T, V21, P713
[9] GULDNER Y, TO BE PUBLISHED
[10] Ivanov-Omskii V. I., 1976, Soviet Physics - Solid State, V17, P1678