ROOM-TEMPERATURE GROWTH OF AIN THIN-FILMS BY LASER ABLATION

被引:64
作者
SEKI, K [1 ]
XU, XQ [1 ]
OKABE, H [1 ]
FRYE, JM [1 ]
HALPERN, JB [1 ]
机构
[1] HOWARD UNIV,MAT SCI RES CTR EXCELLENCE,WASHINGTON,DC 20059
关键词
D O I
10.1063/1.107040
中图分类号
O59 [应用物理学];
学科分类号
摘要
Excimer laser ablation of compressed AlN powder has been used to grow thin AlN films at room temperature on a variety of substrates. The films have a band gap of 6.15 eV as measured by UV absorption. Examination with a scanning electron microscope and an optical microscope shows that the films are smooth. The IR spectrum has an absorption characteristic of AlN. Growth rates are extremely rapid, exceeding 70 nm/min.
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页码:2234 / 2236
页数:3
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