RECOMBINATION IN HIGH-RESISTIVITY NORMAL-TYPE ZN-COMPENSATED SILICON

被引：7

作者：

RABIE, S ^{[1
]}

RUMIN, N ^{[1
]}

机构：

[1] MCGILL UNIV,DEPT ELECT ENGN,MONTREAL H3C 3G1,QUEBEC,CANADA

来源：

关键词：

D O I：

10.1063/1.1663902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3988 / 3995

页数：8

共 19 条

[1]

BAKHADYRKHANOV MK, 1970, SOV PHYS SEMICOND+, V4, P739

[2] DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J].

CARLSON, RO .

PHYSICAL REVIEW, 1957, 108 (06) :1390-1393

[3]

DIESEL TS, 1965, B AM PHYS SOC, V10, P1199

[4] DIFFUSION AND ELECTRICAL BEHAVIOR OF ZINC IN SILICON [J].

FULLER, CS ;

MORIN, FJ .

PHYSICAL REVIEW, 1957, 105 (02) :379-383

[5]

GLINCHUK KD, 1964, SOV PHYS-SOL STATE, V5, P2197

[6]

GLINCHUK KD, 1964, SOV PHYS-SOL STATE, V5, P1412

HERMAN, JM ;

SAH, CT .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02) :405-415

[8]

KORNILOV BV, 1968, SOV PHYS SEMICOND+, V2, P216

[9]

KORNILOV BV, 1966, FIZ TVERD TELA+, V8, P157

[10]

KORNILOV BV, 1964, SOV PHYS-SOL STATE, V5, P2420