IMPROVED MORPHOLOGY OF AU-BASED CONTACTS TO GAAS

被引：4

作者：

BARCZ, AJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 05期

关键词：

D O I：

10.1109/EDL.1987.26602

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：200 / 201

页数：2

共 9 条

[1]

BARCZ AJ, IN PRESS THIN SOLID

[2]

KAMINSKA E, 1984, 6TH INT C THIN FILMS

[3]

KAMINSKA E, 1984, Patent No. 253317

[4] MODEL PREDICTIONS FOR THE ENTHALPY OF FORMATION OF TRANSITION-METAL ALLOYS .2. [J].

NIESSEN, AK ;

DEBOER, FR ;

BOOM, R ;

DECHATEL, PF ;

MATTENS, WCM .

CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1983, 7 (01) :51-70

[5] TERNARY CONDENSED PHASE SYSTEMS OF GALLIUM AND ARSENIC WITH GROUP IB ELEMENTS [J].

PANISH, MB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (05) :516-&

[6] OHMIC CONTACTS TO III-V-COMPOUND SEMICONDUCTORS - A REVIEW OF FABRICATION TECHNIQUES [J].

PIOTROWSKA, A ;

GUIVARCH, A ;

PELOUS, G .

SOLID-STATE ELECTRONICS, 1983, 26 (03) :179-&

[7]

REMBA RD, 1985, IEEE ELECT DEV LETT, V8, P437

[8] INSITU MEASUREMENTS OF ARSENIC LOSSES DURING ANNEALING OF USUAL EVAPORATED CONTACTS OF GAAS GUNN DIODES [J].

SEBESTYEN, T ;

MENYHARD, M ;

SZIGETHY, D .

ELECTRONICS LETTERS, 1976, 12 (04) :96-97

[9]

WILLIAMS RS, 1986, MATER RES SOC S P, V54, P335

← 1 →