INSITU MEASUREMENTS OF ARSENIC LOSSES DURING ANNEALING OF USUAL EVAPORATED CONTACTS OF GAAS GUNN DIODES

被引：26

作者：

SEBESTYEN, T ^{[1
]}

MENYHARD, M ^{[1
]}

SZIGETHY, D ^{[1
]}

机构：

[1] HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY

来源：

ELECTRONICS LETTERS | 1976年 / 12卷 / 04期

关键词：

D O I：

10.1049/el:19760075

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：96 / 97

页数：2

共 8 条

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[4] REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS [J].

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1975, 18 (06) :541-550

[5] METALLURGICAL AND ELECTRICAL PROPERTIES OF ALLOYED NI-AU-GE FILMS ON N-TYPE GAAS [J].

ROBINSON, GY .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :331-&

[6]

SALOW H, 1968, Z ANGEW PHYSIK, V25, P137

[7] NEW METHOD FOR PRODUCING IDEAL METAL-SEMICONDUCTOR OHMIC CONTACTS [J].

SEBESTYEN, T ;

HARTNAGEL, H ;

HERRON, LH .

ELECTRONICS LETTERS, 1974, 10 (18) :372-373

[8]

SEBESTYEN T, 1975, 5TH INT S GAL ARS RE, P77

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